Detail guide of fastest electronics switching device mosfet


MOSFET As Switching devices ( MOSFET  tutorial )



fastest electronics switching device mosfet





Basic of the electronics switching device mosfet


what does mosfet mean ?

mosfet definition


let's started ,

Hi guys here we talk about the Detail guide of fastest electronics switching device mosfet.


You all are know that the MOSFET is the fastest switching devices.


Simply we called MOSFET in electronics Language then it is the metal oxide semiconductor field effect transistor.


It has Some of the ability to the change conductivity by the amount of the applied voltage.


Mosfet is the four terminal devices.they are like Source(S) , Gate(G) , Drain (D) and Body (B) terminals.


If you check in the electrical circuit then only appears three terminals.


If you say that how the Mosfet is different from the other switching devices then Mosfet has required very less amount of the current for the turn on.(less than 1mA).


Now we talk about the enhancement mode then in this mode voltage drop across the oxide induces a conducting channel  between the source and drain.


In the market different type of the Mosfet is available just like n channel mosfet , mosfet transistor , q point mosfet  , mosfet diode , radioshack mosfet , current mirror mosfet , aws raptor mosfet , fairchild mosfet , renesas mosfet , vgs mosfet , super junction mosfet , miller effect mosfet , high voltage mosfet , mosfet relay , mosfet switch , high current mosfet ,onsemi mosfet , k3569 mosfet , irf mosfet , quad mosfet , gan mosfet , gate mosfet , p channel mosfet switch , n channel mosfet basics , st mosfet etc..


Insulated gate field effect transistor or IGFET is the related term with the MOSFET.



Composite Material


mosfet switch design
fastest electronics switching device mosfet



Now We Talk about the MOSFET composite material then  MOSFET is the Chemical composition of the silicon and germanium.


If you say why sillicon if we think then find many semiconductors with better electrical properties than silicon, like gallium arsenide but it has not form good semiconductor-to-insulator interfaces.


Gate is separated by the thin insulating material of silicon dioxide and later of silicon oxynitride.


Now most of the companies have started to introduce a high-κ dielectric + metal gate combination.

  


Symbol of MOSFET 


Two type of MOSFET device is available 


1) N channel MOSFET 

2) P Channel MOSFET


We talk about these both topic in detail ....



fastest electronics switching device mosfet





Working of MOSFET (MOSFET operation)

how does a mosfet work


fastest electronics switching device mosfet


Mosfet is very small integrated circuit device.Large scale integration is impossible without the MOSFET switching device.


You know that MOSFET has Four terminal device.They are like Gate ,Drain. Source , Base etc..


Its Drain And source terminal are connected to the heavily doped region..Its Gate terminal is connected to the top of the oxide layer and its Body terminal is connected to the intrinsic semiconductor.


In between the Drain and Source terminal inversion layer is create so current flow in this inversion layer is controlled by Gate voltage.Thus MOSFET is voltage controlled device.


Generally Two type of MOSFET device is available N channel And P channel MOSFET.


In N channel MOSFET Current is flow due to the electrons in inversion layer And in P channel layer current is flow due to the holes.


Another Charecteristics is like enhancement type and depletion type MOSFETs. 


In the Enhancement mode Turn off and On by apply the GATE voltage.opposition process is happen in the depletion type of MOSFET.



Working Principle of MOSFET



Working principle of MOSFET is depend on the MOS capacitor.main important part of the MOSFET is MOS capacitor.


Here apply Positive and Negative gate voltages respectively for the surface below the oxide layer and between the  drain and source terminal can converted in to the P-type and N-type.


When We apply the positive Gate voltage then the oxide layer experience the repulsive force and holes are the pushes downward.


Its depletion region is bounded by the negative changes.which is associated with acceptor atoms. 


Also the Positive voltage is attracts to the electron from the  N+ source and drain .


Now if we apply the voltage between the source and the drain  then the current is flow freely between the source and drain.


If we apply the negative voltage then the hole channel will be formed beneath the oxide layer. 


For the conduction of the current between source and drain  we need to controlling of the source to gate voltage.


When gate voltage is exceed to given level then conduction is started,


shown in below equation for the more detail guide..



  Here ,

UN = Mobility of electron
COX  = Capacitance of the oxide layer
W = Width of the gate area
L = Length of the channel
VGS = Gate to Source voltage
VTH  = Threshold voltage
VDS  = Drain to Source voltage.


For get some basic principle of MOSFET check below video tutorial








Two type of MOSFET device is available 



1) P channel MOSFET 



2) N Channel MOSFET






1) P channel MOSFET 



If P channel region in between Source and Gate then called is P channel MOSFET.P - MOSFET is four terminal device.they are like Gate , drain , Source and Body.

In this Four terminal Drain and source are heavily doped P+ region.Body region is the N type region.

In the p channel material current is flow due to the Positive Holes that's why that material is also called as the P type material.

P type material is composite of the P+ donor material.

Now if we apply negative supply then electron is present in the oxide layer which experience a repulsive force and electron are pushed in downward in to the body region.

and here depletion region is populated by the positive atoms which is due to the donor atoms.

Due to this negative voltage apply is also attracts the holes from the P+ source and drain material.

Now due to this apply voltage between source and drain current is flow.

It has two mode of operation 

1) enhancement Mode

2) depletion Mode

For this shown in below diagram for detail information












2) N Channel MOSFET



Mosfet material which having the N-type of region in between source and drain is known as the N- channel MOSFET.

N-MOSFET is four terminal device.they are like Gate , drain , Source and Body.

Here some of is exact opposite from the P channel MOSFET.

Here Drain and Source region is heavily Doped N+ region.

Body is the P Type of doping.Here current is flow due to the Negatively charge electrons,and that's why this type of MOSFET is called as the N-type MOSFET.

Here when we apply the Positive gate voltage then the Holes is also present in the oxide layer so repulsive force are create.

So holes are pushes in to the downwards.

Gue to This positive gate voltage Also attracts the electrons from the  N+ source and drain.so electrons reach channel is formed.

Now we apply voltage between Gate and source terminal of the MOSFET.

Here in the N type of MOSFET Electron concentration is prefered over the P type of material.

In N type of material Mobility of Electrons is much higher then the Mobility of holes in the P type of the MOSFET.

It has two mode of operation 

1) enhancement Mode

2) depletion Mode

For this shown in below diagram for detail information







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